? 1999 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 6 a i dm t c = 25 c, 24 a pulse width limited by t jm i ar t c = 25 c6a e ar t c = 25 c20mj e as 700 m j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 180 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated, low q g , high dv/dt features z ixys advanced low q g process z low gate charge and capacitances - easier to drive - faster switching z international standard packages z low r ds (on) z unclamped inductive switching (uis) rated z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 1000 v v gs(th) v ds = v gs , i d = 2.5 ma 2.0 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25 c50 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 1.9 ? pulse test, t 300 s, duty cycle d 2 % 98561a (6/99) to-247 ad (ixfh) g = gate d = drain s = source tab = drain hiperfet tm power mosfets q-class to-268 (d3) ( ixft) (tab) g s v dss = 1000 v i d25 = 6 a r ds(on) = 1.9 ? ? ? ? ? t rr 250 ns ixfh 6n100q ixft 6n100q
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfh 6n100q ixft 6n100q symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 3 5 s c iss 2200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 180 pf c rss 30 pf t d(on) 10 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 15 ns t d(off) r g = 4.7 ? (external), 22 n s t f 12 ns q g(on) 48 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 17 nc q gd 22 nc r thjc 0.7 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 9 a i sm repetitive; pulse width limited by t jm 24 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = i s , -di/dt = 100 a/ s, v r = 100 v 0.75 c i rm 7.5 a to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain
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